Gallium Nitride (GaN)-Powder

Characteristic




Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special[clarification needed] properties for applications in optoelectronic,[8][9] high-power and high-frequency devices.    




Chemical formula：GaN

Molar mass：83.730 g/mol

Appearance：yellow powder

Density：6.1 g/cm3

Melting point：>1600 °C

Solubility in water：Insoluble

Band gap：3.4 eV (300 K, direct)

Electron mobility：1500 cm2/(V·s) (300 K)

Thermal conductivity：1.3 W/(cm·K) (300 K)

Refractive index (nD)：2.429

Crystal structure：Wurtzite







Application




Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments.




Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for THz devices.