Aluminum Nitride (AlN)-Granules

Aluminum Nitride (AlN)-Granules introduce:

Characteristic




Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 285 W/(m·K), and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.




Chemical formula：AlN

Molar mass：40.989 g/mol

Appearance：white to pale-yellow solid

Density：3.255 g/cm3

Melting point：2,500 °C (4,530 °F; 2,770 K)

Solubility in water：hydrolyses (powder), insoluble (monocrystalline)

Solubility insoluble, subject of hydrolysis in water solutions of bases and acids 

Band gap：6.015 eV

Electron mobility：~300 cm2/(V·s)

Thermal conductivity：285 W/(m·K)

Refractive index (nD)：2.1–2.2 (crystals)  1.8-1.9 (amorphous)

Crystal structure：Wurtzite




Application







Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. One application is an RF filter which is widely used in mobile phones,] which is called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.




AlN is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.




Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.




Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In 2006, an inefficient AlN LED emission at 210 nm was reported.